MG25Q6ES50
vs
BSM25GD120DN2E3224
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Additional Feature |
HIGH SPEED SWITCHING
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
35 A
|
35 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| JESD-30 Code |
R-PDIP-P24
|
R-XUFM-X17
|
| Number of Elements |
6
|
6
|
| Number of Terminals |
24
|
17
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
UNSPECIFIED
|
| Terminal Position |
DUAL
|
UPPER
|
| Transistor Application |
MOTOR CONTROL
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
600 ns
|
450 ns
|
| Turn-on Time-Nom (ton) |
200 ns
|
140 ns
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
ECONOPACK-17
|
| Pin Count |
|
17
|
| ECCN Code |
|
EAR99
|
| Samacsys Manufacturer |
|
Infineon
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
200 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| VCEsat-Max |
|
3.2 V
|
|
|
|
Compare MG25Q6ES50 with alternatives
Compare BSM25GD120DN2E3224 with alternatives