BSM25GD120DN2E3224 vs MG25Q6ES50A feature comparison

BSM25GD120DN2E3224 Infineon Technologies AG

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MG25Q6ES50A Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description ECONOPACK-17 FLANGE MOUNT, R-XUFM-X17
Pin Count 17
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 35 A 35 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-XUFM-X17 R-XUFM-X17
Number of Elements 6 6
Number of Terminals 17 17
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 200 W 200 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 450 ns 600 ns
Turn-on Time-Nom (ton) 140 ns 150 ns
VCEsat-Max 3.2 V 3.6 V
Base Number Matches 3 1
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 6 V
Power Dissipation Ambient-Max 200 W
Transistor Application MOTOR CONTROL

Compare BSM25GD120DN2E3224 with alternatives

Compare MG25Q6ES50A with alternatives