M464S3323DN1-L1L vs MT16LSDF3264HG-10EXX feature comparison

M464S3323DN1-L1L Samsung Semiconductor

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MT16LSDF3264HG-10EXX Micron Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code MODULE SODIMM
Package Description DIMM, DIMM144,32 DIMM,
Pin Count 144 144
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 6 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144 R-XZMA-N144
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 65 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096
Self Refresh YES YES
Standby Current-Max 0.032 A
Supply Current-Max 1.76 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 1
JESD-609 Code e0
Length 67.585 mm
Seated Height-Max 3.8 mm
Terminal Finish TIN LEAD
Width 31.75 mm

Compare M464S3323DN1-L1L with alternatives

Compare MT16LSDF3264HG-10EXX with alternatives