Datasheets
M464S3323DN1-L1L by: Samsung Semiconductor

Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144

Part Details for M464S3323DN1-L1L by Samsung Semiconductor

Overview of M464S3323DN1-L1L by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for M464S3323DN1-L1L

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M464S3323DN1-L1L Part Data Attributes

M464S3323DN1-L1L Samsung Semiconductor
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M464S3323DN1-L1L Samsung Semiconductor Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE
Package Description DIMM, DIMM144,32
Pin Count 144
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode DUAL BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144
Memory Density 2147483648 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.032 A
Supply Current-Max 1.76 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for M464S3323DN1-L1L

This table gives cross-reference parts and alternative options found for M464S3323DN1-L1L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M464S3323DN1-L1L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M464S3323DN1-C1H Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Samsung Semiconductor M464S3323DN1-L1L vs M464S3323DN1-C1H
M464S3323DN1-L1H Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Samsung Semiconductor M464S3323DN1-L1L vs M464S3323DN1-L1H
Part Number Description Manufacturer Compare
THLY25N01B75L IC 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM Toshiba America Electronic Components M464S3323DN1-L1L vs THLY25N01B75L
MT16LSDF3264HG-10EXX Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Micron Technology Inc M464S3323DN1-L1L vs MT16LSDF3264HG-10EXX
WED3DG6434V11D1 Synchronous DRAM Module, 32MX64, CMOS, SODIMM-144 Microsemi Corporation M464S3323DN1-L1L vs WED3DG6434V11D1
M463S3254DK1-L7C Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, MICRO, SODIMM-144 Samsung Semiconductor M464S3323DN1-L1L vs M463S3254DK1-L7C
HYM72V32M656AT6-S Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S3323DN1-L1L vs HYM72V32M656AT6-S
WED3DG6435V10D1-QG Synchronous DRAM Module, 32MX64, 6ns, CMOS, ROHS COMPLIANT, SODIMM-144 Microsemi Corporation M464S3323DN1-L1L vs WED3DG6435V10D1-QG
MT8LSDT3264HY-133 Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, PDMA144 Micron Technology Inc M464S3323DN1-L1L vs MT8LSDT3264HY-133
HB52RD328DC-A6F Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Hitachi Ltd M464S3323DN1-L1L vs HB52RD328DC-A6F
HYS64V32220GD-8A-A Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Infineon Technologies AG M464S3323DN1-L1L vs HYS64V32220GD-8A-A
HYM75V32M636T6-H Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, SODIMM-144 SK Hynix Inc M464S3323DN1-L1L vs HYM75V32M636T6-H

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