M383L3310ETS-CA0 vs HYMD216726C6-M feature comparison

M383L3310ETS-CA0 Samsung Semiconductor

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HYMD216726C6-M SK Hynix Inc

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code DIMM DMA
Package Description DIMM, DIMM184 DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
JESD-609 Code e0
Memory Density 2415919104 bit 1207959552 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 33554432 words 16777216 words
Number of Words Code 32000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX72 16MX72
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 8192
Self Refresh YES YES
Standby Current-Max 1.06 A 0.1 A
Supply Current-Max 4.78 mA 1.675 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Access Time-Max 0.75 ns

Compare M383L3310ETS-CA0 with alternatives

Compare HYMD216726C6-M with alternatives