Memory
M383L3310ETS-CA0
Samsung Semiconductor
Description: DDR DRAM Module, 32MX72, CMOS, DIMM-184

Overview of M383L3310ETS-CA0 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Computing and Data Storage

CAD Models for M383L3310ETS-CA0 by Samsung Semiconductor
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Part Data Attributes for M383L3310ETS-CA0 by Samsung Semiconductor

M383L3310ETS-CA0
Samsung Semiconductor
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIMM
Package Description
DIMM, DIMM184
Pin Count
184
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
FOUR BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
100 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
JESD-609 Code
e0
Memory Density
2415919104 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
4096
Self Refresh
YES
Standby Current-Max
1.06 A
Supply Current-Max
4.78 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
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  1. M383L3310ETS-CA0
    Samsung Semiconductor
    DDR DRAM Module, 32MX72, CMOS, DIMM-184
    VS

Alternate Parts for M383L3310ETS-CA0

This table gives cross-reference parts and alternative options found for M383L3310ETS-CA0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M383L3310ETS-CA0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYMD216726C6-M DDR DRAM Module, 16MX72, 0.75ns, CMOS, SODIMM-184 SK Hynix Inc M383L3310ETS-CA0 vs HYMD216726C6-M
V827432K24SAIY-D0 DDR DRAM Module, 32MX72, 0.65ns, CMOS, LEAD FREE, DIMM-184 ProMOS Technologies Inc M383L3310ETS-CA0 vs V827432K24SAIY-D0
WED3EG72M18S202JD3SG DDR DRAM Module, 16MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M383L3310ETS-CA0 vs WED3EG72M18S202JD3SG
MT9VDDF1672Y-202 DRAM, 16MX72, 0.8ns, CMOS, PDMA184 Micron Technology Inc M383L3310ETS-CA0 vs MT9VDDF1672Y-202
MT5VDDT3272LAY-26AXX DDR DRAM Module, 32MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 Micron Technology Inc M383L3310ETS-CA0 vs MT5VDDT3272LAY-26AXX
MT9VDDT3272AY-40BA1 DDR DRAM Module, 32MX72, 0.7ns, CMOS, DIMM-184 Micron Technology Inc M383L3310ETS-CA0 vs MT9VDDT3272AY-40BA1
WED3EG7232S263JD3IMG DDR DRAM Module, 32MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M383L3310ETS-CA0 vs WED3EG7232S263JD3IMG
M381L3223DTM-CCC DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184 Samsung Semiconductor M383L3310ETS-CA0 vs M381L3223DTM-CCC
MT18VDDT3272LAIG-26AXX DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Micron Technology Inc M383L3310ETS-CA0 vs MT18VDDT3272LAIG-26AXX
M312L1713FTS-CB3 DDR DRAM Module, 16MX72, CMOS, DIMM-184 Samsung Semiconductor M383L3310ETS-CA0 vs M312L1713FTS-CB3

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