KM23V128000TY-12 vs NAND128R4A3DN6 feature comparison

KM23V128000TY-12 Samsung Semiconductor

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NAND128R4A3DN6 Numonyx Memory Solutions

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NUMONYX
Part Package Code TSOP1 TSOP
Package Description TSOP1, TSOP1,
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.51
Access Time-Max 120 ns 15000 ns
Alternate Memory Width 8
JESD-30 Code R-PDSO-G48 R-PDSO-G48
Length 16.4 mm 18.4 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type MASK ROM FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16 8MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP1 TSOP1
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Supply Current-Max 0.04 mA
Supply Voltage-Max (Vsup) 3.3 V 1.95 V
Supply Voltage-Min (Vsup) 2.7 V 1.65 V
Supply Voltage-Nom (Vsup) 3 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Width 12 mm 12 mm
Base Number Matches 1 4
JESD-609 Code e0
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 1.8 V
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NAND TYPE

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Compare NAND128R4A3DN6 with alternatives