K7N323601M-HC160
vs
K7P323666M-HC250
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
BGA,
|
| Pin Count |
119
|
119
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
3.5 ns
|
2 ns
|
| Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V SUPPLY
|
| JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B119
|
| Length |
22 mm
|
22 mm
|
| Memory Density |
37748736 bit
|
37748736 bit
|
| Memory IC Type |
ZBT SRAM
|
LATE-WRITE SRAM
|
| Memory Width |
36
|
36
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
119
|
119
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
1MX36
|
1MX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.465 V
|
2.63 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
2.37 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
14 mm
|
14 mm
|
| Base Number Matches |
1
|
1
|
| Seated Height-Max |
|
2.21 mm
|
|
|
|
Compare K7N323601M-HC160 with alternatives
Compare K7P323666M-HC250 with alternatives