Part Details for K7N323601M-HC160 by Samsung Semiconductor
Overview of K7N323601M-HC160 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 54HC160/BEA | Rochester Electronics LLC | Replacement for Texas Instruments part number 5962-8682401EA. Buy from authorized manufacturer Rochester Electronics. | |
| 74HC160FPEL-E | Renesas Electronics Corporation | HD/RD74HC Series | |
| 74HC160P-E | Renesas Electronics Corporation | HD/RD74HC Series |
Part Details for K7N323601M-HC160
K7N323601M-HC160 CAD Models
K7N323601M-HC160 Part Data Attributes
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K7N323601M-HC160
Samsung Semiconductor
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Datasheet
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K7N323601M-HC160
Samsung Semiconductor
ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA119, BGA-119
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | BGA, | |
| Pin Count | 119 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 3.5 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| JESD-30 Code | R-PBGA-B119 | |
| Length | 22 mm | |
| Memory Density | 37748736 bit | |
| Memory IC Type | ZBT SRAM | |
| Memory Width | 36 | |
| Number of Functions | 1 | |
| Number of Terminals | 119 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX36 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.465 V | |
| Supply Voltage-Min (Vsup) | 3.135 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | BOTTOM | |
| Width | 14 mm |
Alternate Parts for K7N323601M-HC160
This table gives cross-reference parts and alternative options found for K7N323601M-HC160. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7N323601M-HC160, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GS832436B-150 | Cache SRAM, 1MX36, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | GSI Technology | K7N323601M-HC160 vs GS832436B-150 |
| GS832436GB-225T | Cache SRAM, 1MX36, 6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | GSI Technology | K7N323601M-HC160 vs GS832436GB-225T |
| GS8322Z36GB-150T | ZBT SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 | GSI Technology | K7N323601M-HC160 vs GS8322Z36GB-150T |
| GS8324Z36B-250IT | ZBT SRAM, 1MX36, 6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | GSI Technology | K7N323601M-HC160 vs GS8324Z36B-250IT |
| K7N323645M-HC160 | ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA119, BGA-119 | Samsung Semiconductor | K7N323601M-HC160 vs K7N323645M-HC160 |
| GS8322Z36AGB-333IV | ZBT SRAM, 1MX36, 5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 | GSI Technology | K7N323601M-HC160 vs GS8322Z36AGB-333IV |
| K7P323666M-HC250 | Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Samsung Semiconductor | K7N323601M-HC160 vs K7P323666M-HC250 |
| GS832236AB-300 | Cache SRAM, 1MX36, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | GSI Technology | K7N323601M-HC160 vs GS832236AB-300 |
| GS8322ZV36B-133 | ZBT SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 PITCH, FPBGA-119 | GSI Technology | K7N323601M-HC160 vs GS8322ZV36B-133 |
| GS832436GB-150T | Cache SRAM, 1MX36, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | GSI Technology | K7N323601M-HC160 vs GS832436GB-150T |