K4B4G0846A-HYH90 vs K4B4G0846A-HYH9T feature comparison

K4B4G0846A-HYH90 Samsung Semiconductor

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K4B4G0846A-HYH9T Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TFBGA, BGA78,9X13,32 FBGA, BGA78,9X13,32
Pin Count 78
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.3 ns 0.255 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 667 MHz 667 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 8 8
JESD-30 Code R-PBGA-B78 R-PBGA-B78
Length 12.5 mm
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR3L DRAM DDR3L DRAM
Memory Width 8 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78 78
Number of Words 536870912 words 536870912 words
Number of Words Code 512000000 512000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 512MX8 512MX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA FBGA
Package Equivalence Code BGA78,9X13,32 BGA78,9X13,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 8 8
Standby Current-Max 0.015 A 0.015 A
Supply Current-Max 0.19 mA 0.19 mA
Supply Voltage-Max (Vsup) 1.45 V
Supply Voltage-Min (Vsup) 1.283 V
Supply Voltage-Nom (Vsup) 1.35 V 1.35 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm
Base Number Matches 1 1

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