K4B4G0846A-HYH9T vs MT41J512M8RH-125:E feature comparison

K4B4G0846A-HYH9T Samsung Semiconductor

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MT41J512M8RH-125:E Micron Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Package Description FBGA, BGA78,9X13,32 TFBGA,
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.255 ns
Clock Frequency-Max (fCLK) 667 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B78 R-PBGA-B78
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR3L DRAM DDR DRAM
Memory Width 8 8
Number of Terminals 78 78
Number of Words 536870912 words 536870912 words
Number of Words Code 512000000 512000000
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 512MX8 512MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 8
Standby Current-Max 0.015 A
Supply Current-Max 0.19 mA
Supply Voltage-Nom (Vsup) 1.35 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Samacsys Manufacturer Micron
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-609 Code e1
Length 10.5 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) 30
Width 9 mm

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Compare MT41J512M8RH-125:E with alternatives