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K4B4G0446B-MCF80 vs H5TQ4G43MFR-H9C feature comparison

K4B4G0446B-MCF80 Samsung Semiconductor

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H5TQ4G43MFR-H9C SK Hynix Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code BGA BGA
Package Description LFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32
Pin Count 78 78
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Access Time-Max 0.3 ns 0.255 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 533 MHz 667 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B78 R-PBGA-B78
Length 11.5 mm 11 mm
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR3 DRAM DDR3 DRAM
Memory Width 4 4
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 78 78
Number of Words 1073741824 words 1073741824 words
Number of Words Code 1000000000 1000000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 1GX4 1GX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LFBGA TFBGA
Package Equivalence Code BGA78,9X13,32 BGA78,9X13,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.5 mm 1.2 mm
Self Refresh YES YES
Standby Current-Max 0.024 A 0.02 A
Supply Current-Max 0.25 mA 0.165 mA
Supply Voltage-Max (Vsup) 1.575 V 1.575 V
Supply Voltage-Min (Vsup) 1.425 V 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 20
Width 10 mm 9.4 mm
Base Number Matches 1 1
Interleaved Burst Length 4,8
JESD-609 Code e1
Sequential Burst Length 4,8
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Memory » DRAMs
Memory » DRAMs

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Compare H5TQ4G43MFR-H9C with alternatives