K3P6V1000B-TE100
vs
KM23C32000CG
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
TSOP2
|
SOIC
|
| Package Description |
TSOP2,
|
SOP,
|
| Pin Count |
44
|
44
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
100 ns
|
150 ns
|
| Alternate Memory Width |
8
|
|
| JESD-30 Code |
R-PDSO-G44
|
R-PDSO-G44
|
| Length |
18.41 mm
|
28.5 mm
|
| Memory Density |
33554432 bit
|
33554432 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
16
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
44
|
44
|
| Number of Words |
2097152 words
|
4194304 words
|
| Number of Words Code |
2000000
|
4000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Organization |
2MX16
|
4MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP2
|
SOP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
240
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
3.1 mm
|
| Supply Current-Max |
0.06 mA
|
0.05 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Width |
10.16 mm
|
12.6 mm
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
USER CONFIGURABLE AS 2M X 16
|
| Operating Temperature-Max |
|
70 °C
|
| Operating Temperature-Min |
|
|
| Temperature Grade |
|
COMMERCIAL
|
|
|
|
Compare K3P6V1000B-TE100 with alternatives
Compare KM23C32000CG with alternatives