JV2N7228
vs
FMI12N50ES
feature comparison
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
ADVANCED POWER TECHNOLOGY INC
|
FUJI ELECTRIC CO LTD
|
| Package Description |
FLANGE MOUNT, S-MSFM-P3
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
750 mJ
|
460.8 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
12 A
|
12 A
|
| Drain-source On Resistance-Max |
0.515 Ω
|
0.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
|
| JESD-30 Code |
S-MSFM-P3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
48 A
|
48 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-S-19500/592
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Additional Feature |
|
LOW NOISE
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
180 W
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare JV2N7228 with alternatives
Compare FMI12N50ES with alternatives