FMI12N50ES
vs
12N50G-TA3-T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
End Of Life
Active
Ihs Manufacturer
FUJI ELECTRIC CO LTD
UNISONIC TECHNOLOGIES CO LTD
Package Description
IN-LINE, R-PSIP-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Avalanche Energy Rating (Eas)
460.8 mJ
684 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
12 A
12 A
Drain-source On Resistance-Max
0.5 Ω
0.54 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
192 W
Pulsed Drain Current-Max (IDM)
48 A
48 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Part Package Code
TO-220AB
JEDEC-95 Code
TO-220AB
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare FMI12N50ES with alternatives
Compare 12N50G-TA3-T with alternatives