JV2N7228
vs
FDP13N50F
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
FAIRCHILD SEMICONDUCTOR CORP
Package Description
FLANGE MOUNT, S-MSFM-P3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
750 mJ
684 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
12 A
12 A
Drain-source On Resistance-Max
0.515 Ω
0.54 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-220AB
JESD-30 Code
S-MSFM-P3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
48 A
48 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-S-19500/592
Surface Mount
NO
NO
Terminal Form
PIN/PEG
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
Part Package Code
TO-220AB
Pin Count
3
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
195 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare JV2N7228 with alternatives
Compare FDP13N50F with alternatives