JANTXV1N6127A
vs
1N6127A
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
BKC SEMICONDUCTORS INC
|
MICROCHIP TECHNOLOGY INC
|
Reach Compliance Code |
unknown
|
compliant
|
Breakdown Voltage-Min |
67.5 V
|
71.3 V
|
Breakdown Voltage-Nom |
75 V
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
108.1 V
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
e0
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
56 V
|
56 V
|
Reverse Current-Max |
1 µA
|
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
9
|
11
|
Package Description |
|
HERMETIC SEALED, GLASS, B PACKAGE-2
|
Factory Lead Time |
|
21 Weeks
|
Additional Feature |
|
HIGH RELIABILITY
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max |
|
2 W
|
|
|
|
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