1N6127A
vs
JANTX1N6127A
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMICON COMPONENTS INC
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
75 V
Clamping Voltage-Max
103 V
103.1 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e0
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
56 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
11
9
Breakdown Voltage-Min
71.3 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
JESD-30 Code
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
Package Shape
ROUND
Package Style
LONG FORM
Power Dissipation-Max
3 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/516
Reverse Current-Max
1 µA
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Compare 1N6127A with alternatives
Compare JANTX1N6127A with alternatives