JANTXV1N6062A vs JANTX1N6062A feature comparison

JANTXV1N6062A Silicon Transistor Corporation

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JANTX1N6062A Defense Logistics Agency

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Part Life Cycle Code Transferred Active
Ihs Manufacturer SILICON TRANSISTOR CORP DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 95.5 V 95.5 V
Breakdown Voltage-Min 86.5 V 86.5 V
Case Connection ISOLATED ANODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/500 MIL-19500/507D
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Package Description DO-13, 2 PIN
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 75 V

Compare JANTXV1N6062A with alternatives

Compare JANTX1N6062A with alternatives