JANTXV1N6062A
vs
1N6062ATR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2017-11-03
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
86.5 V
86.5 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-XALF-W2
O-MALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
155 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
75 V
75 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
1
Pbfree Code
Rohs Code
Part Package Code
DO-13
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count
2
Breakdown Voltage-Max
95.5 V
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
Power Dissipation-Max
1 W
Terminal Finish
TIN LEAD
Compare JANTXV1N6062A with alternatives
Compare 1N6062ATR with alternatives