JANTX1N6116A
vs
1N6112A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SENSITRON SEMICONDUCTOR
Package Description
HERMETIC SEALED, GLASS, E, 2 PIN
Reach Compliance Code
compliant
compliant
Factory Lead Time
25 Weeks
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +125C
Candidate List Date
2020-06-25
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
Qualifications
DLA
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
25.7 V
17.1 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
20.6 V
13.7 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
16
Pbfree Code
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Date Of Intro
1998-01-01
Clamping Voltage-Max
25.1 V
Reverse Current-Max
1 µA
Compare JANTX1N6116A with alternatives
Compare 1N6112A with alternatives