JANS1N6152
vs
3Z20
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SEMTECH CORP
TOSHIBA CORP
Package Description
HERMETIC SEALED PACKAGE-2
O-PALF-W2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
METALLURGICALLY BONDED
Breakdown Voltage-Min
24.3 V
Breakdown Voltage-Nom
27 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
39.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
7.5 W
3 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
20.6 V
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
5
4
Rohs Code
Dynamic Impedance-Max
30 Ω
JEDEC-95 Code
DO-201AD
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Reference Voltage-Nom
20 V
Reverse Current-Max
10 µA
Voltage Tol-Max
10%
Working Test Current
10 mA
Compare JANS1N6152 with alternatives
Compare 3Z20 with alternatives