JANHCA2N6756
vs
IRF132
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
DIE-3
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
14 A
|
12 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XUUC-N3
|
O-MBFM-P2
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
155 °C
|
Package Body Material |
UNSPECIFIED
|
METAL
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
UNCASED CHIP
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
75 W
|
79 W
|
Pulsed Drain Current-Max (IDM) |
56 A
|
48 A
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/542G
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
NO LEAD
|
PIN/PEG
|
Terminal Position |
UPPER
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
25
|
Drain-source On Resistance-Max |
|
0.23 Ω
|
JEDEC-95 Code |
|
TO-204AA
|
|
|
|
Compare JANHCA2N6756 with alternatives
Compare IRF132 with alternatives