IRF132
vs
IRF130-JQR-B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
TT ELECTRONICS PLC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
12 A
45 A
Drain-source On Resistance-Max
0.23 Ω
0.21 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-3
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
155 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
79 W
Pulsed Drain Current-Max (IDM)
48 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
11
2
Avalanche Energy Rating (Eas)
75 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare IRF132 with alternatives
Compare IRF130-JQR-B with alternatives