JAN2N6849U
vs
IRFE9130-JQRE4
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TT ELECTRONICS PLC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Microsemi Corporation
|
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
CHIP CARRIER, R-CQCC-N15
|
| Additional Feature |
|
AVALANCHE ENERGY RATING
|
| Avalanche Energy Rating (Eas) |
|
92 mJ
|
| Case Connection |
|
SOURCE
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
100 V
|
| Drain Current-Max (ID) |
|
6.1 A
|
| Drain-source On Resistance-Max |
|
0.345 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-CQCC-N15
|
| JESD-609 Code |
|
e4
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
15
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
CHIP CARRIER
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
|
24 A
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
GOLD
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
QUAD
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare JAN2N6849U with alternatives
Compare IRFE9130-JQRE4 with alternatives