Part Details for IRFE9130-JQRE4 by TT Electronics Resistors
Overview of IRFE9130-JQRE4 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFE9130-JQRE4
IRFE9130-JQRE4 CAD Models
IRFE9130-JQRE4 Part Data Attributes
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IRFE9130-JQRE4
TT Electronics Resistors
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Datasheet
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IRFE9130-JQRE4
TT Electronics Resistors
Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Package Description | CHIP CARRIER, R-CQCC-N15 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE ENERGY RATING | |
Avalanche Energy Rating (Eas) | 92 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6.1 A | |
Drain-source On Resistance-Max | 0.345 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFE9130-JQRE4
This table gives cross-reference parts and alternative options found for IRFE9130-JQRE4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE9130-JQRE4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE9130-JQRE4 | 6.1A, 100V, 0.345ohm, P-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFE9130-JQRE4 vs IRFE9130-JQRE4 |
IRFE9130-JQR-B | Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFE9130-JQRE4 vs IRFE9130-JQR-B |
IRFE9130-JQR | Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFE9130-JQRE4 vs IRFE9130-JQR |
IRFE9130PBF | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | IRFE9130-JQRE4 vs IRFE9130PBF |
IRFE9130E4 | 6.1A, 100V, 0.345ohm, P-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFE9130-JQRE4 vs IRFE9130E4 |
IRFE9130-JQR-AE4 | Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFE9130-JQRE4 vs IRFE9130-JQR-AE4 |
IRFE9130 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE9130-JQRE4 vs IRFE9130 |
IRFE9130-JQR-A | 6.1A, 100V, 0.345ohm, P-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFE9130-JQRE4 vs IRFE9130-JQR-A |
IRFE9130E4 | Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFE9130-JQRE4 vs IRFE9130E4 |
IRFE9130-JQR-BE4 | Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFE9130-JQRE4 vs IRFE9130-JQR-BE4 |