JAN1N6108AUS
vs
1N6108AUS
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
SENSITRON SEMICONDUCTOR
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
11.4 V
11.4 V
Breakdown Voltage-Nom
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
17.3 V
16.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MELF-R2
O-LELF-R2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
9.1 V
9.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
8
Pbfree Code
No
Part Package Code
MELF
Package Description
MELF-2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Factory Lead Time
20 Weeks
Date Of Intro
1998-01-01
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Current-Max
20 µA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare JAN1N6108AUS with alternatives
Compare 1N6108AUS with alternatives