JAN1N6108AUS vs 1N6108AUS feature comparison

JAN1N6108AUS Bkc Semiconductors Inc

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1N6108AUS Sensitron Semiconductors

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC SENSITRON SEMICONDUCTOR
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 11.4 V 11.4 V
Breakdown Voltage-Nom 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V 16.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MELF-R2 O-LELF-R2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 9.1 V 9.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 8
Pbfree Code No
Part Package Code MELF
Package Description MELF-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 20 Weeks
Date Of Intro 1998-01-01
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 20 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JAN1N6108AUS with alternatives

Compare 1N6108AUS with alternatives