JAN1N5802US
vs
1N5802US
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
VPT COMPONENTS
|
Part Package Code |
MELF
|
|
Package Description |
MELF-2
|
MELF-2
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Factory Lead Time |
45 Weeks
|
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Application |
ULTRA FAST RECOVERY
|
FAST RECOVERY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.875 V
|
0.875 V
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
JESD-609 Code |
e0
|
|
Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Output Current-Max |
2.5 A
|
2.5 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500
|
|
Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
3
|
Breakdown Voltage-Min |
|
60 V
|
Operating Temperature-Min |
|
-65 °C
|
Reverse Current-Max |
|
1 µA
|
Technology |
|
AVALANCHE
|
|
|
|
Compare JAN1N5802US with alternatives
Compare 1N5802US with alternatives