1N5802US
vs
JANTXV1N5802
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VPT COMPONENTS
|
SEMTECH CORP
|
| Package Description |
MELF-2
|
HERMETIC SEALED, G111, 2 PIN
|
| Reach Compliance Code |
compliant
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
FAST RECOVERY
|
SUPER FAST SOFT RECOVERY
|
| Breakdown Voltage-Min |
60 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
0.875 V
|
| JESD-30 Code |
O-LELF-R2
|
E-LALF-W2
|
| Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
2.5 A
|
1.3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Reverse Current-Max |
1 µA
|
1 µA
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
YES
|
NO
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
9
|
10
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Factory Lead Time |
|
100 Weeks
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/477
|
|
|
|
Compare 1N5802US with alternatives
Compare JANTXV1N5802 with alternatives