JAN1N5535BUR-1
vs
JAN1N5535B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
KNOX SEMICONDUCTORS INC
Package Description
HERMETIC SEALED, GLASS, MLL34, MELF-2
O-LALF-W2
Reach Compliance Code
compliant
unknown
Factory Lead Time
20 Weeks
Additional Feature
METALLURGICALLY BONDED
LOW NOISE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-213AA
JESD-30 Code
O-LELF-R2
O-LALF-W2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.4 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
MIL-19500/437
Reference Voltage-Nom
15 V
15 V
Surface Mount
YES
NO
Technology
ZENER
ZENER
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WRAP AROUND
WIRE
Terminal Position
END
AXIAL
Voltage Tol-Max
5%
5%
Working Test Current
1 mA
1 mA
Base Number Matches
1
3
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Dynamic Impedance-Max
100 Ω
Reverse Current-Max
0.01 µA
Voltage Temp Coeff-Max
12.3 mV/°C
Compare JAN1N5535BUR-1 with alternatives
Compare JAN1N5535B with alternatives