IXTY44N10T
vs
HUF75637SMD05
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
LITTELFUSE INC
TT ELECTRONICS PLC
Package Description
,
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
250 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
44 A
44 A
Drain-source On Resistance-Max
0.03 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
47 pF
JEDEC-95 Code
TO-252AA
TO-276AA
JESD-30 Code
R-PSSO-G2
R-CBCC-N3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
130 W
Pulsed Drain Current-Max (IDM)
110 A
160 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
NO LEAD
Terminal Position
SINGLE
BOTTOM
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Qualification Status
Not Qualified
Compare IXTY44N10T with alternatives
Compare HUF75637SMD05 with alternatives