HUF75637SMD05
vs
IRF5N3710
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
INFINEON TECHNOLOGIES AG
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
44 A
45 A
Drain-source On Resistance-Max
0.03 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-276AA
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160 A
180 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
Avalanche Energy Rating (Eas)
250 mJ
JESD-609 Code
e0
Power Dissipation-Max (Abs)
125 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare HUF75637SMD05 with alternatives
Compare IRF5N3710 with alternatives