IXFR180N06 vs SPB80N06S2-07 feature comparison

IXFR180N06 IXYS Corporation

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SPB80N06S2-07 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer IXYS CORP INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ 530 mJ
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 180 A 80 A
Drain-source On Resistance-Max 0.005 Ω 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A 320 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN SILVER COPPER MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code D2PAK
JEDEC-95 Code TO-263AB
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 250 W

Compare IXFR180N06 with alternatives

Compare SPB80N06S2-07 with alternatives