IXFR180N06 vs NDB706AL feature comparison

IXFR180N06 IXYS Corporation

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NDB706AL National Semiconductor Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer IXYS CORP NATIONAL SEMICONDUCTOR CORP
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 180 A 75 A
Drain-source On Resistance-Max 0.005 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A 225 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 800 pF
JEDEC-95 Code TO-263AB
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns

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