SPB80N06S2-07 vs IPB80N06S2LH5ATMA1 feature comparison

SPB80N06S2-07 Infineon Technologies AG

Buy Now Datasheet

IPB80N06S2LH5ATMA1 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 530 mJ 700 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0066 Ω 0.0062 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 320 A 320 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Samacsys Manufacturer Infineon

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Compare IPB80N06S2LH5ATMA1 with alternatives