IS43DR16128C-25DBL
vs
SCB18T2G160AF-25E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
XIAN UNILC SEMICONDUCTORS CO LTD
Package Description
TFBGA, BGA84,9X15,32
TFBGA,
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Factory Lead Time
10 Weeks
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Mode
MULTI BANK PAGE BURST
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
0.4 ns
Additional Feature
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Length
12.5 mm
12.5 mm
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR2 DRAM
DDR DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
84
84
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
95 °C
Operating Temperature-Min
Organization
128MX16
128MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Sequential Burst Length
4,8
Standby Current-Max
0.03 A
Supply Current-Max
0.54 mA
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
8 mm
8 mm
Base Number Matches
1
1
Compare IS43DR16128C-25DBL with alternatives
Compare SCB18T2G160AF-25E with alternatives