IRFP341
vs
IRFP350
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TO-3P
TO-3P
Package Description
TO-3P, 3 PIN
TO-3P, 3 PIN
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
520 mJ
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
350 V
400 V
Drain Current-Max (ID)
10 A
15 A
Drain-source On Resistance-Max
0.55 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
150 W
180 W
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
111 ns
Turn-on Time-Max (ton)
62 ns
Base Number Matches
1
2
Compare IRFP341 with alternatives
Compare IRFP350 with alternatives