IRFN250 vs IRFN250 feature comparison

IRFN250 International Rectifier

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IRFN250 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC INFINEON TECHNOLOGIES AG
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 27.4 A 27.4 A
Drain-source On Resistance-Max 0.105 Ω 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A 110 A
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/592 MIL-19500/592
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code No
Samacsys Manufacturer Infineon
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 100 W
Terminal Finish Tin/Lead (Sn/Pb)

Compare IRFN250 with alternatives

Compare IRFN250 with alternatives