IRFN250
vs
JANTXV2N7225
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Contact Manufacturer
|
Ihs Manufacturer |
TT ELECTRONICS PLC
|
SEMICOA CORP
|
Package Description |
UNCASED CHIP, R-XUUC-N3
|
HERMETIC SEALED PACKAGE-3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
22 A
|
27.4 A
|
Drain-source On Resistance-Max |
0.105 Ω
|
0.105 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XUUC-N3
|
S-XSFM-P3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
UNCASED CHIP
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
88 A
|
110 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
NO LEAD
|
PIN/PEG
|
Terminal Position |
UPPER
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
8
|
JEDEC-95 Code |
|
TO-254AA
|
Reference Standard |
|
MIL-19500
|
|
|
|
Compare IRFN250 with alternatives
Compare JANTXV2N7225 with alternatives