IRFN250
vs
SHD2183B
feature comparison
| Pbfree Code |
No
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
UNCASED CHIP, R-XUUC-N3
|
SMALL OUTLINE, R-CSSO-G2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
22 A
|
30 A
|
| Drain-source On Resistance-Max |
0.105 Ω
|
0.085 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XUUC-N3
|
R-CSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
88 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
UPPER
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Pin Count |
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Moisture Sensitivity Level |
|
1
|
| Power Dissipation Ambient-Max |
|
150 W
|
| Power Dissipation-Max (Abs) |
|
150 W
|
|
|
|
Compare IRFN250 with alternatives
Compare SHD2183B with alternatives