IRFF430R
vs
JANTXV2N6802
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INTERSIL CORP
Package Description
CYLINDRICAL, O-MBCY-W3
HERMETIC SEALED, TO-205AF, 3 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
300 mJ
0.35 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
2.75 A
2.5 A
Drain-source On Resistance-Max
1.5 Ω
1.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
11 A
11 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
Base Number Matches
3
8
Part Package Code
BCY
Pin Count
4
Additional Feature
HIGH RELIABILITY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
MIL-19500/557
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRFF430R with alternatives
Compare JANTXV2N6802 with alternatives