IRFF430R
vs
2N6802
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
MOTOROLA INC
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
2.75 A
3.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
25 W
Pulsed Drain Current-Max (IDM)
11 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
Base Number Matches
3
12
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