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IRFF330 vs JAN2N6800 feature comparison

IRFF330 Vishay Siliconix

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JAN2N6800 International Rectifier

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SILICONIX INC INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 3.5 A 3 A
Drain-source On Resistance-Max 1 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205 TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 14 A
Terminal Finish TIN LEAD
Transistor Application SWITCHING
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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