IRF9130-QR-BR1
vs
2N6804E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
MICROSEMI CORP
Package Description
FLANGE MOUNT, O-MBFM-P2
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
81 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
11 A
11 A
Drain-source On Resistance-Max
0.35 Ω
0.36 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e1
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
50 A
50 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
MATTE TIN
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Additional Feature
HIGH RELIABILTY
Transistor Application
SWITCHING
Compare IRF9130-QR-BR1 with alternatives
Compare 2N6804E3 with alternatives