IRF7413TRPBF-1 vs IRF7413Z feature comparison

IRF7413TRPBF-1 Infineon Technologies AG

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IRF7413Z Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 13 A 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 2
Package Description SO-8
Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.01 Ω
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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