IRF7413TRPBF-1
vs
IRF7413Z
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
13 A
13 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
2
2
Package Description
SO-8
Avalanche Energy Rating (Eas)
32 mJ
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.01 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IRF7413TRPBF-1 with alternatives
Compare IRF7413Z with alternatives