IRF7413TRPBF-1
vs
IRF7413
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
13 A
13 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Surface Mount
YES
YES
Base Number Matches
2
2
Package Description
SOP-8
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)
260 mJ
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.011 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
58 A
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IRF7413TRPBF-1 with alternatives
Compare IRF7413 with alternatives