IRF7413TRPBF-1 vs IRF7413PBF-1 feature comparison

IRF7413TRPBF-1 Infineon Technologies AG

Buy Now Datasheet

IRF7413PBF-1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 13 A 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2.5 W
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2
Package Description SMALL OUTLINE, R-PDSO-G8
Avalanche Energy Rating (Eas) 260 mJ
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.011 Ω
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 58 A
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Compare IRF7413TRPBF-1 with alternatives

Compare IRF7413PBF-1 with alternatives