IRF7413TRPBF-1
vs
IRF7413Z
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
13 A
13 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
2.5 W
Surface Mount
YES
YES
Base Number Matches
1
6
Part Package Code
SOIC
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Avalanche Energy Rating (Eas)
32 mJ
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.01 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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Compare IRF7413Z with alternatives