IRF7353D1PBF vs NTMSD6N303R2 feature comparison

IRF7353D1PBF International Rectifier

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NTMSD6N303R2 Rochester Electronics LLC

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Pbfree Code Yes Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP ROCHESTER ELECTRONICS LLC
Part Package Code SOIC SOT
Package Description LEAD FREE, SO-8 CASE 751-07, SOIC-8
Pin Count 8 8
Reach Compliance Code compliant unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 6.5 A 6 A
Drain-source On Resistance-Max 0.032 Ω 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 52 A 30 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Manufacturer Package Code CASE 751-07
Avalanche Energy Rating (Eas) 325 mJ

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Compare NTMSD6N303R2 with alternatives