NTMSD6N303R2
vs
SI9410DY-T1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
VISHAY INTERTECHNOLOGY INC
Part Package Code
SOT
Package Description
CASE 751-07, SOIC-8
SOP-8
Pin Count
8
Manufacturer Package Code
CASE 751-07
Reach Compliance Code
unknown
compliant
Avalanche Energy Rating (Eas)
325 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
6 A
7 A
Drain-source On Resistance-Max
0.032 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
30 A
30 A
Qualification Status
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Compare NTMSD6N303R2 with alternatives
Compare SI9410DY-T1 with alternatives